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PHYSICS OF SEMICONDUCTOR DEVICES PDF

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Physics of. Semiconductor Devices. Third Edition. S. M. Sze. Department of Electronics Engineering. National Chiao Tung University. Hsinchu, Taiwan and. It is up to the Instructor to decide to which depth he or she wishes to teach the physics of semiconductor devices. In the Annex, the Reader is reminded of. Semiconductor Power Devices: Physics, Characteristics, Reliability Semiconductor Optoelectronic Devices: Introduction to Physics and Simulation.


Physics Of Semiconductor Devices Pdf

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Physics of. Semiconductor Devices. Third Edition. S. M. Sze. National Chiao Tung University. Hsinchu, Taiwan and. Stanford University. Stanford, California. Ballasting resistor Ballistic transport 37,49, , , , 3 10,. ,,, Physics of Semiconductor Devices, 3rd Edition by S. M. Sze and. View Table of Contents for Physics of Semiconductor Devices of the standard textbook and reference in the field of semiconductor devices.

The physics of semiconductor microcavities: Power Semiconductor Devices General Engineering. Complete Guide to Semiconductor Devices. Semiconductor Optoelectronic Devices: Introduction to Physics and Simulation. The Physics of Semiconductor Microcavities. Physical Models of Semiconductor Quantum Devices. Basic semiconductor physics. Basic Semiconductor Physics. Physics of Quantum Well Devices. Physics of Carbon Nanotube Devices. Physics and Devices.

Recommend Documents. Sze Department of Electronics Colinge Department of Electrical and Comp Neamen Univer. Your name. Density of states in energy bands 1.

Intrinsic semiconductor 1.

Compound Semiconductor Device Physics

Extrinsic semiconductor 1. Ionization of impurity atoms 1. Electron-hole equilibrium 1. Calculation of the Fermi Level 1. Degenerate semiconductor 1.

Alignment of Fermi levels Important Equations Problems 1 1 1 1 3 6 7 15 19 20 21 25 29 31 34 35 37 39 40 43 44 2. Theory of Electrical Conduction 2.

Drift of electrons in an electric field 2. Mobility 2. Drift current 2. Hall effect 2. Diffusion current 2. Drift-diffusion equations 2. Einstein relationships 2.

Transport equations 2. Introduction 3. Direct and indirect transitions 3. Excess carrier lifetime 3. SRH recombination 3. Minority carrier lifetime 3. Surface recombination Important Equations Problems 73 73 74 77 79 82 86 87 89 89 4.

Physics of Semiconductor Devices

The PN Junction Diode 4. Introduction 4. Unbiased PN junction 4. Biased PN junction 4. Current-voltage characteristics 4. Derivation of the ideal diode model 4.

Junction breakdown 4.

Short-base diode 4. PN junction capacitance 4. Transition capacitance 4. Diffusion capacitance 4.

Charge storage and switching time 4. Models for the PN junction 4. Quasi-static, large-signal model 4. Small-signal, low-frequency model 4. Small-signal, high-frequency model 4. Solar cell 4. PiN diode Important Equations Problems 95 95 97 5. Metal-semiconductor contacts 5. Schottky diode 5. Energy band diagram 5. Extension of the depletion region 5. Schottky effect 5.

Current-voltage characteristics 5. Influence of interface states 5. Comparison with the PN junction 5. Ohmic contact Important Equations Problems Contents 6. The JFET 6. The MOS Transistor 7. Introduction and basic principles 7.

The MOS capacitor 7. Accumulation 7. Depletion 7. Inversion 7.

Threshold voltage 7. Flat-band voltage 7. Current in the MOS transistor 7.

Influence of substrate bias on threshold voltage 7. Simplified model 7. Surface mobility 7.

Physics of Semiconductor Devices - S.M. Sze_Part II.pdf

Carrier velocity saturation 7. Subthreshold current - Subthreshold slope 7. Continuous model 7.

Channel length modulation 7. Numerical modeling of the MOS transistor 7. Short-channel effect 7. Hot-carrier degradation 7. Scaling rules 7. Hot electrons 7. Substrate current 7.

Gate current 7. Degradation mechanism 7. Terminal capacitances 7. Polysilicon depletion 7. High-k dielectrics 7. Drain-induced barrier lowering DIBL 7. Gate-induced drain leakage GIDL 7.

Reverse short-channel effect 7. Quantization effects in the inversion channel Important Equations Problems viii Contents 8.

The Bipolar Transistor 8. Introduction and basic principles 8. Long-base device 8. Short-base device 8. Fabrication process 8. Amplification using a bipolar transistor 8. Ebers-Moll model 8. Emitter efficiency 8. Transport factor in the base 8. Regimes of operation 8. Transport model 8.

Gummel-Poon model 8. Current gain 8. Recombination in the base 8. Emitter efficiency and current gain 8. Early effect 8. Dependence of current gain on collector current 8. Recombination at the emitter-base junction 8. Kirk effect 8. Base resistance 8. Numerical simulation of the bipolar transistor 8. Collector junction breakdown 8. Common-base configuration 8. Common-emitter configuration 8.

Charge-control model 8. Forward active mode 8. Large-signal model 8.

Small-signal model Important Equations Problems 9. Heterojunction Devices 9. Concept of a heterojunction 9. Energy band diagram 9.Usually physics of semiconductor devices deals only with electrons situated near the minimum of the conduction band or holes located near the maximum of the valence band.

Ashcroft, N. Power semiconductor devices.

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Mobility 2. A recombination event where photons are emitted is called "radiative recombination" and is exploited in devices such as light-emitting diodes. The probability of occupancy of the donor level, can be obtained by substituting for E in the Fermi-Dirac distribution function. Reverse short-channel effect 7. Early effect 8. Base resistance 8. Electron-hole pairs are also apt to recombine.