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BDW83D PDF

Sunday, August 18, 2019


NOTES: 1. These values apply when the base-emitter diode is open circuited. 2. Derate linearly to 150°C case temperature at the rate of 1.2. BDW83C, BDW83D,. 23/10/2012. COMSET SEMICONDUCTORS. 1 | 3. They are silicon epitaxial-base NPN power monolithic Darlington. DESCRIPTION. ·With TO-3PN package. ·Complement to type BDW84/84A/84B/ 84C/84D. ·DARLINGTON. ·High DC current gain. APPLICATIONS. ·For use in.


Bdw83d Pdf

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BDW83D. DESCRIPTION. ·Collector Current -IC= 15A. ·High DC Current Gain- hFE= (Min)@ IC= 6A. ·Complement to Type BDW84D. APPLICATIONS. BDW83D Transistor Datasheet pdf, BDW83D Equivalent. Parameters and Characteristics. VCBO. Collector-base voltage (IE = 0). V. VCEO. Collector-emitter voltage ( IB = 0). V. VEBO. Emitter-base voltage (IC = 0). 5. V. IC.

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